TRANSISTOR DEVICE WITH BOTH SIDES CHARACTERISTIC

摘要

The switching transistor operates in both forward and reverse directions. The switching transistor comprises a lowly concentrated n-type epitaxial layer (3) on the p-type Si substrate; a highly concentrated n-type buried layer (2); a highly concentrated p-type isolated layer (4); two highly concentrated p-type impurity regions on the n-type epitaxial layer (3); an oxide layer (5) and metal electrodes (6).