发明名称 Multi-quantum well (MQW) structure laser diode/modulator integrated light source.
摘要 A multi-quantum well (MQW) structure type semiconductor integrated laser element is constituted by a laser diode section and an optical modulator section which is integrated with the laser diode section and which contains a multi-quantum well structure. The multi-quantum well structure of the optical modulator section is a coupled multi-quantum well structure in which quantum states of the quantum wells are coupled with one another, thereby forming mini-bands (7). The large amounts of carriers produced by absorption are quickly scattered and lost through the mini-bands thereby enabling the modulation in proportion to the intensity of the electric field for modulation. The MQW integrated semiconductor laser element thus obtained exhibits excellent modulation characteristics and provides high output, and can be fabricated at a low cost with a high production yield. <IMAGE>
申请公布号 EP0614253(A1) 申请公布日期 1994.09.07
申请号 EP19940103118 申请日期 1994.03.02
申请人 NEC CORPORATION 发明人 TAKANO, SHINJI, C/O NEC CORPORATION
分类号 H01S5/00;G02F1/017;H01S5/026;H01S5/20;H01S5/227;H01S5/30;H01S5/34 主分类号 H01S5/00
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