Method for manufacturing capacitor and MIS transistor.

摘要

In a method for manufacturing a capacitor (C) having a lower electrode (8), an upper electrode (11A, 12A) and a dielectric layer (91, 92, 93) therebetween and a MIS transistor (Qn, QP) on the same semiconductor substrate (1), impurity ions are introduced by ion implantation into the upper electrode as well as a gate electrode of the MIS transistor. <IMAGE>