Gain-guided type laser diode.

摘要

A gain-guided type A nu GaInP visible light laser diode in accordance with the present invention has a characteristic in that, an n-type current-blocking layer for the current constriction in the double-heterojunction structure is highly doped with n-type impurity so as to prevent the formation of p-type inversion layer therein. When an n-GaAs current-blocking layer is formed on a p-GaInP etching stopper layer doped with zinc, the n-type impurity concentration of the n-GaAs current blocking layer is selected to be 3 x 10<1><8> cm<-><3> or more to achieve a large kink-light output at a low oscillation threshold current. <IMAGE>