| 摘要 |
PURPOSE:To obtain a substrate having high performance, large area, ready wiring and high economy by forming a plurality of recesses formed of two types of surfaces on a silicon supporting crystal substrate and covering it with compound semiconductor crystal through specific steps. CONSTITUTION:A silicon supporting crystal substrate 1 has on its one surface a plurality of recessed formed of 111 and 100 surfaces, a compound semiconductor crystal layer 3 for forming a semiconductor element disposed in the recesses, and a thin film 2 made of an insulation material formed on the projections of the substrate 1 having tops divided by the adjacent recesses of 100 surface. At least part of the film 2 is covered with the crystal 3, and continued to the layer 3 for forming adjacent semiconductor elements. Thus, the surface becomes flat, a wiring pattern necessary when integrating an element on the large area substrate is disposed on the layer 3 for connecting adjacent element regions to be readily formed, and no crack occurs on the crystal layer. |
