| 摘要 |
PURPOSE:To improve the flatness of surface of the titled thin tilm as well as to enable to manufacture a ZnS film having excellent orientational property by a method wherein an adduct is formed by mixing dialkylzinc and thioether in the gaseous phase, and Zn source in the form of adduct is supplied to the heating region containing a substrate. CONSTITUTION:Dialkylzinc, which is the source of Zn, is sealed in a bubbler 24. The dialkylzinc is evaporated by performing a bubbling on carrier gas while the bubbler is being maintained at a suitable temperature, and after the evaporated dialkylzinc gas is diluted by the carrier gas running in a diluting carrier gas line 25, it is introduced into a reaction tube part passing through a raw gas introducing tube 26. Thioether is sealed in a bubbler 28, it is evaporated by performing a bubbling on the carrier gas and joins the gas introducing tube 26 after it has been diluted by the carrier gas running in a diluting carrier gas line 30. An adduct is formed at the point of meeting. H2S, which is the source of S, is sealed in a cylinder 27, it joins the introducing tube 26 after dilution by the carrier gas running in the dilution line 29 and then joins the adduct which is already formed. |
