Process for forming a metal contact on a relief of a semicondactor substrate, including a step of flowing a photosensitive resin layer.

摘要

A metallic contact (3, 4) is formed by etching of a metallic film locally protected by a blob of photosensitive resin (2). Then this resin is made to flow in the presence of vapours of a solvent of the latter, in order to form a protection blob of wider extent (2, 5). This latter blob makes it possible to carry out etching of the semiconductur substrate (1) with self-alignment of the relief thus formed with respect to the metallic contact. The resin remains photosensitive in order to allow subsequent etching. The invention applies especially to fabrication of avalanche photodiodes.