| 发明名称 |
Method of fabricating self-aligned heterojunction bipolar transistors |
| 摘要 |
A method of fabricating heterojunction bipolar transistors (HBTs) including epitaxial growth of collector, base and emitter layers, allowing for self-aligned emitter-base contacts to minimize series base resistance and to reduce total base-collector capacitance.
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| 申请公布号 |
US5344786(A) |
申请公布日期 |
1994.09.06 |
| 申请号 |
US19920942474 |
申请日期 |
1992.09.09 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
BAYRAKTAROGLU, BURHAN |
| 分类号 |
H01L21/28;H01L21/302;H01L21/3065;H01L21/331;H01L27/12;H01L29/205;H01L29/417;H01L29/73;H01L29/737;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 地址 |
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