发明名称 |
Identifying and compensating for slip-plane dislocations in photolithographic mask alignment |
摘要 |
Techniques for identifying and determining the orientation, magnitude, and direction of slip plane dislocations transecting semiconductor dies are described, whereby a four point alignment pattern is examined for "squareness" and size integrity. Lack of squareness or significant change in apparent size of various aspects of the alignment pattern indicate slip-plane dislocations. The magnitude, orientation and direction of the dislocations are determined geometrically from measurement of the alignment pattern. Various other aspects of the invention are directed to optimal alignment of a photolithographic mask to a die which has experienced a slip-plane dislocation, and to discrimination between slip-plane dislocation and die-site rotation.
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申请公布号 |
US5345310(A) |
申请公布日期 |
1994.09.06 |
申请号 |
US19930078878 |
申请日期 |
1993.06.15 |
申请人 |
LSI LOGIC CORPORATION |
发明人 |
ROSTOKER, MICHAEL D.;PASCH, NICHOLAS F.;ZELAYETA, JOE |
分类号 |
G03F9/00;(IPC1-7):G01B11/26 |
主分类号 |
G03F9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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