发明名称 Content addressable memory for high speed retrieval operation without interference between memory cells
摘要 A semiconductor integrated circuit capable of retrieving data from a number of memory cells without mutual interference at high speed and making it possible to build a large capacity data base at higher speed is provided with a set of retrieval memory word blocks including a first and a second memory unit respectively for defining the electrical connection or otherwise nonconnection between a first or second data line and a source electrode line and a control word line for controlling these memory units, a match line having a first potential setting means for setting a first potential beforehand, a sense amplifier for detecting the potential of the match line, and a second potential fixing means for fixing the potential of the match line to a second potential with the source electrode line as a control input. The second potential fixing means is made active or inactive by means of the control word line to control the potential of the match line by making or breaking the connection between the first and second data lines and the common source electrode line in accordance with the definition of the connections of the first and second memory units.
申请公布号 US5345411(A) 申请公布日期 1994.09.06
申请号 US19920982901 申请日期 1992.11.30
申请人 KAWASAKI STEEL CORPORATION 发明人 YONEDA, MASATO
分类号 G11C15/00;G11C15/04;G11C16/04;G11C17/00;(IPC1-7):G11C13/00 主分类号 G11C15/00
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