| 摘要 |
<p>PURPOSE:To provide a method for measuring infrared reflection spectrum which can detect an extremely thin film formed on the surface of a substrate for semi-transmitting infrared light and its sample. CONSTITUTION:A rear surface 11b of a sample 1 where an object 12 to be measured in thin-film state is formed on a surface 11a of a substrate 11 for transmitting infrared light is polished to mirror-surface state. Then, a reflection film 13 for reflecting infrared light is stuck to the rear surface 11b which is polished to mirror surface. Then, infrared light 3 which is subjected to P polarization is applied to the sample 1 from the side of the object 12 to be measured. Then, the spectra of the infrared rays 4 and 5 which are reflected from the sample 1 are measured. Also, the surface 11a of the substrate 11 is in mirror- surface state.</p> |
