PATTERN FORMING METHOD OF POSITIVE TYPE ELECTRON BEAM RESIST

摘要

PURPOSE:To provide a developing method of a positive type electron beam resist having high sensitivity and high resolution and an excellent adhesion property and dry etching resistance, i.e., the excellent resist pattern forming method. CONSTITUTION:A developer consisting essentially of a resist-soluble solvent selected from among alkyl lactate having 2 to 5C alkyl groups is used as a developer for resist consisting essentially of 2-cyanoacrylate polymer, etc. The formation of the patterns of the positive type electron beam resist having the high sensitivity and the high resolution and the excellent adhesion property and dry etching resistance is possible according to this method. A high effect is obtd. in improving productivity and quality in production of photomasks, LSIs and VLSIs.