| 摘要 |
PURPOSE: To make contacts overlap with each other by forming a local interconnection of tungsten, through reactive ion etching by CMOS technology and manufacturing a high-density CMOS circuit. CONSTITUTION: An etching stop layer of chromium is stuck on a circuit element of a silicon substrate. Then a conductive layer of tungsten in stuck non- selectively on the chromium layer 24. Further, the surface of a tungsten layer 26 is patterned and etched so that the etching is stopped by the chromium layer 24, and a photoresist mask is removed. Lastly, reactive ion etching of directional O2 is performed for selectively removing the etching stop layer of chromium up to the substrate, thereby manufacturing a structure of local interconnections 30 and 30' of tungsten and chromium. consequently, the interconnection 30 can overlap with regions 32 and 34, and the interconnection 30' can overlap with regions 36 and 38 to reduce a device.
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