发明名称 POSITIVE TYPE RADIATION SENSITIVE MIXTURE
摘要 PURPOSE:To provide the novel mixture which can be developed with an aq. alkaline soln., has a stable acid latent image, is for production of semiconductor structure and has high radiation sensitivity in a short wavelength UV region by incorporating a binder which is insoluble in water and is soluble in aq. alkaline soln. and specific compds. into the mixture. CONSTITUTION:This mixture contains, as essential components, binder a which is insoluble in water and is soluble in aq. alkaline soln., compd. b which has at least one bonds cleavable by an acid, compd. c which generates an acid by radiation and basic ammonium compd. d. The content of the basic ammonium compd. d is 0.01 to 1.00mol equiv. of the max. quantity of the acid which can be theoretically formed out of the compd. c. Such compd. d is being sold in the market as an aq. soln. of ammonium hydroxide or a methanol soln. and this strong basic compd. is added to a resist soln., thereby phenolite anions are generated in the resist matrix. These anions neutralize the acid successively diffusing into non-exposed areas.
申请公布号 JPH06242605(A) 申请公布日期 1994.09.02
申请号 JP19930025751 申请日期 1993.02.15
申请人 HOECHST JAPAN LTD 发明人 KURAUSU YURUGEN SHIBERA;MASUDA SEIYA;KINOSHITA YOSHIAKI;KUDO TAKANORI;SUEHIRO NATSUMI;MUNIRACHIYUNA PADOMANABAN;OKAZAKI HIROSHI;ENDO HAJIME
分类号 G03F7/004;G03F7/028;G03F7/039;H01L21/027;(IPC1-7):G03F7/039 主分类号 G03F7/004
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