| 摘要 |
PURPOSE:To improve the speed of response and the high-frequency characteristic of a semiconductor laser by making the height of an electrode, to be connected to one electrode of a semiconductor laser element with a boding wire and formed being insulated from a chip carrier, approximately equal to that of a submount. CONSTITUTION:A submount 2 to which a semiconductor element 1 is fitted is joined to a chip carrier 3 by fusion. An electrode pattern 30 on the upside of a supporting block 6 to be joined to the chip carrier 3 by fusion is provided at height approximately equal to an electrode 11 on the upside of the submount 2, and is connected with bonding wires 12. To the other end of the electrode pattern 30, a ribbon conductor 13 is joined by fusion. A common electrode 29 is provided at the same height as the semiconductor laser element 1, and connected to the semiconductor element 1 with a bonding wire 10. Consequently, it becomes possible to shorten the length of the bonding wires 10 and 12, decrease the reluctance, and make the speed of response faster. Besides, it becomes possible to reduce the return of the laser beam, and reduce the noise. |
