| 摘要 |
<p>PURPOSE:To prevent the lowering in film-forming efficiency, the increase in stepping and also in the deterioration in characteristics of a transistor. CONSTITUTION:The angle in the direction 6 of a substrate 5 and an ion beam is inclined to a certain degee from the right angle, and the transistor characteristics same as the case where film thickness is equivalently thicker without increasing the thickness of the insulating film 1 which becomes mask for ion implantation. Uniform implantation can be obtained by rotating the substrate, or asymmetric implantation can be achieved by fixing the substrate.</p> |
