| 摘要 |
PURPOSE:To provide a mask for the deformed illuminating exposure device capable of improving the resolution of isolated patterns. CONSTITUTION:Auxiliary patterns AS1, AS2 of line width sw1, sw2 are arranged by maintaining distances s1, s2 on both sides of the isolated main pattern A of the line width (w) of the mask for the deformed illuminating exposure device optimized to the min. pattern pitch P. The line width sw1, sw2 are set narrower than the min. line width P/2 so that the auxiliary patterns are not independently resolved. The distances s1, s2 are set to attain P/<=s1<=(P-sw1) and P/2<=s2((P-sw2) so that the optical path difference between the transmitted light of the auxiliary patterns AS1, AS2 and the transmitted light of the main pattern A varies by about half the wavelength. The light bleeding out of the main pattern A to the dark part is negated by the light bleeding out of the auxiliary patterns AS1, AS2 to the dark part, by which the contrast is stressed and the resolution is improved. |
