PHASE SHIFT MASK AND ITS PRODUCTION

摘要

PURPOSE:To provide a phase shift mask having shifter patterns capable of forming fine and intricate patterns on a wafer and the method for production thereof. CONSTITUTION:Light shielding film patterns 2 having plural interline distances l1 and l2 are formed on the surface of a transparent substrate 1. A shifter material 3a of a negative type which is sensitized with an electron beam is formed over the entire surface of the transparent substrate 1 formed with the light shielding film patterns 2. The shifter material 3a to be made to remain at the plural interline distances of the light shielding film patterns 3 is irradiated with the electron beam by setting the exposure to the shifter material 3a to be made to remain by existing at the distance 12 of the long interline distance lambda2 of the light shielding film patterns 2 larger than the exposure to the shifter material 3a to be made to remain by existing at the distance lambda1 of the short interline distance of the light shielding film patterns 2. The exposed shifter materials 3a are developed, by which the shifter patterns 3 are formed.