| 摘要 |
<p>PURPOSE:To obtain a stabilized MOS transistor of strong mechanical strength by having a semiconductor supported by an insulating film by a method wherein an insulating film is deposited on a single-crystal semiconductor substrate, a hole is provided and a semiconductor is epitaxially grown in the hole. CONSTITUTION:A hole 3 is formed in a silicon oxide film 2, and a silicon epitaxial substrate 4 is grown in the hole 3. The silicon oxide film 2 on the circumference of the silicon epitaxial substrate 4 is removed leaving a part of the silicon epitaxial substrate 4. A single-crystal silicon substrate 1 is isolated by oxidizing the silicon epitaxial substrate 4, and a gate oxide film 6 is formed. A polysilicon 7 is arranged on the gate oxide film 6, and a source/drain region is self-aligned by diffusing impurities on the silicon epitaxial substrate 4 using the polysilicon 7 as a mask. As a result, a mechanically strong semiconductor device can be manufactured in a stable manner.</p> |
