SUBSTRATE WITH THIN-FILM RESISTOR, INK JET HEAD AND INK JET HEAD DEVICE

摘要

PURPOSE:To suppress an expansion of a protection film and prevent a separation or the like between a heating resistor and the protection film by specifying the ratio of argon atoms contained in the protection film. CONSTITUTION:An SiO2 film is formed by thermal oxidation on the surface of a Si wafer which serves as a device supporter 5 and used as a low part layer 6 of an element 1. A heating resistant layer 7 of HfB2 is formed on this lower part layer 6 by sputtering. Then, a Ti layer and an Al layer are continuously deposited by electronic beam deposition, thereby forming a common wiring electrode 3 and a selection wiring electrode 4. Finally, the element supporter 5 laminates an SiO2 made-protection film on the whole surfaces of the element 1 based on a magnetron type high rate sputtering process in an Ar sputtering device. The ratio of argon (Ar) atoms contained in the protection film is specified to be 0.2wt.% and over and 6.0wt.% and below. This construction makes it possible to prevent separations or the like between the heating resistor and the protection layer.