RESIN-SEALED SEMICONDUCTOR DEVICE

摘要

PURPOSE:To provide a high frequency band resin-sealed semiconductor device having a simple structure, a low manufacturing cost and small dielectric loss. CONSTITUTION:A high frequency band resin-sealed semiconductor device comprises electrodes of a GaAs element electrically connected to a lead frame in such a manner that at least a surface of the element and bonded parts of the electrodes to leads are integrally sealed with resin whose dielectric constant is between 1.3 and 3. The resin is formed of three-dimensionally crosslinked resin having Tg or HDT of 130 deg.C or higher.