FILM FORMING METHOD AND FILM FORMING APPARATUS

摘要

This invention aims at providing a film forming method and a film forming apparatus which are capable of varying the density and composition of a deposition film in the direction of the thickness thereof, and obtaining a film of a stable and high quality. A film forming apparatus consisting of a sealed container having an inlet port for a gas used to cause a chemical vapor growth and sputter a target material, at least two electrodes provided in the container, means for supporting the target material and a substrate on the first and second electrodes out of these electrodes, and two high-frequency power sources having different frequencies and connected to the first and second electrodes; and a film forming method consisting of introducing a gas into the container, applying high-frequency power of different frequencies to the first and second electrodes to generate plasma, and forming a film while controlling DC potential of the target material, whereby a deposition film containing at least one kind of atom out of the atoms constituting the target material and at least one kind of atom out of the atoms contituting the gas mentioned above is formed on the substrate.