发明名称 SEMICONDUCTOR DEVICE
摘要 A device comprising invertor circuit group including two or more invertor circuits formed by neuron MOS transistors; means for applying a first signal voltage common to the two or more invertors of the invertor circuit group to a first input gate of the invertor circuits; means for applying a given second signal to one or more second input gates other than the first input gate of the invertor circuits; a delay circuit for transmitting the variation of the output voltage of at least one of the invertor circuits of the invertor circuit group with a time delay generated by use of the variation with time of the signal voltage of either or both of the first and second signal voltages; a transistor whose ON and OFF is controlled by the signal transmitted from the delay circuit; storage circuits taking in signals by the ON and OFF of the transistor; and means for executing a given logical operation with respect to the output voltage signals generated by the invertor circuit group. The device has a function of storing the result of the logical operation in the storage circuits.
申请公布号 WO9419760(A1) 申请公布日期 1994.09.01
申请号 WO1994JP00262 申请日期 1994.02.22
申请人 SHIBATA, TADASHI;OHMI, TADAHIRO;YAMASHITA, TAKEO, 发明人 SHIBATA, TADASHI;OHMI, TADAHIRO;YAMASHITA, TAKEO,
分类号 G06F7/02;G06F7/24;G06G7/60;G06N3/063;G11C15/04;H01L27/10;H03K19/00;H03K19/0948;(IPC1-7):G06G7/60 主分类号 G06F7/02
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