DIRECT BONDING METHOD OF HETERO-TYPE SEMICONDUCTOR SUBSTRATE

摘要

The method includes the steps of forming a protective layer 2 on the front and back surface of a compound semiconductor substrate 1, forming a polysilion layer 3 on the front and back surface of the compound semiconductor substrate on which the protective layer is formed, polishing one surface of the compound semiconductor substrate to form a first mirror 4a and making first mirror have hydrophilic property, polishing a surface of a silicon substrate to form a second mirror 4b and making second mirror have hydrophilic property, bonding first and second mirror of the compound semiconductor substrate and silicon substrate, and performing heat treatment, thereby increasing the bonding strength.