| 摘要 |
<p>A bipolar transistor (2), comprising a collector region (C1), base region (B1), and emitter region (E1), is a compatible type to CMOS processes leading to the formation, on a semiconductor substrate (10), of N-channel and P-channel MOS transistors having respective source and drain regions; in such transistor the collector region (C1) is a substrate diffused pocket (3) and the base region (B1) is formed within the diffused pocket (3) simultaneously with the source (8) and drain (9) regions of the P-channel MOS transistors (7). Further, the emitter region (E1) is incorporated, in turn, to the base region (B1) simultaneously with the source and drain regions of the N-channel MOS transistors. <IMAGE></p> |
