| 摘要 |
PURPOSE:To simply prepare an element with excellent characteristics, by changing the etching-rate of a silicon film covering a region that a Schottky-barrier-diode must be formed, and by removing the silicon film without damaging a surface of a substrate. CONSTITUTION:A base region 12 is made up, and a SiO2 mask 13 and a silicon film 14 are built up. An emitter region 16 is diffused, a photoresist film 17 is formed and a window 13S for making up a Schottky-barrier-diode (SBD) is exposed by patterning the film 17. Argon ions, etc. are injected, the etching-rate of the silicon film 14 is increased, the film 14 is patterned, and the resist film is removed, thus building up an electrode. Consequently, a surface of a semiconductor layer 11 is not damaged because the etching-rate of the silicon film 14 is large, and etching in the lateral direction is not also produced, thus obtaining an element with high reliability. |
