| 摘要 |
PURPOSE:To obtain the title semiconductor device of stabled quality thru the procedure wherein an anode oxide layer of specific form is formed on the main surface being exposed at opening of insulated protective membrane on semiconductor substrate, followed by establishing Schottky barrier region and removing the membrane by etching selectively. CONSTITUTION:On the main surface (100) of GaAs substrate 1a, SiO2 membrane 2a of approx. 1mu thickness is evaporation formed. Then, opening 3 is formed at the prescribed location, and anode oxide membrane 8 of 8000 Angstrom thickness is formed on the exposed GaAs substrate 1a using tartaric acid, followed by the forming of Schottky barrier region of a specific form after removing oxide film 8 by dipping into hydrochloric acid. On the exposed GaAs surface, the primary electrode 4a of Ni plated film is formed, followed by the forming of the secondary electrode 5a being ohmic contacted by Au-Ge membrane, thus completing the Schottky barrier type GaAs diode. By the above procedure, Schottky barrier region of a specific form is established and the semiconductor device of stabled quality is obtained. |
