发明名称 Inert gas rectifying/blowing apparatus for single crystal pulling device.
摘要 The gas emission ring pipe 50 is positioned concentrically with the rectifying cylinder 38 connected at the upper end to the opening at the upper end of the main chamber 12 and aligned concentrically with the single crystal 36 pulled up. A plurality of holes 50a for gas emission are formed on the inner side of the ring pipe 50 in the direction of the radius. The inert gas G1 flows down inside the rectifying cylinder 38 and the cooling inert gas G2 is supplied via the gas delivery pipe 52 from outside of the main chamber 12 into the ring pipe 50. Since the cooling inert gas G2 is emitted through the emission holes 50a of the ring pipe 50, the lower portion of the single crystal can be cooled safely and efficiently and the vertical temperature gradient of the single crystal 36 near the solid/liquid interface is steeper, resulting in improved growth rate of the single crystal 36. <IMAGE>
申请公布号 EP0612867(A1) 申请公布日期 1994.08.31
申请号 EP19940102606 申请日期 1994.02.22
申请人 SHIN-ETSU HANDOTAI COMPANY LIMITED 发明人 MIZUISHI, KOJI, C/O ISOBE PLANT;TOYOSHIMA, MASARU, C/O ISOBE PLANT;OHIWA, HIDEO, C/O ISOBE PLANT
分类号 C30B15/00;C30B15/14;C30B27/02;H01L21/208 主分类号 C30B15/00
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