| 摘要 |
<p>PURPOSE:To inhibit problems, such as the deterioration in electrical characteristics due to the mixing of impurities, the lowering of the controllability of an etching process, etc., by forming an insulator layer on a transparent conductive film, shaping a contact hole in the insulator layer and forming a semiconductor thin film onto the insulator layer. CONSTITUTION:An insulating film 2 is formed onto a transparent conductive film 1. A contact hole 3 is bored to the insulating film 2 in drain and source electrode sections for a TFT, and an n<+>-a-Si layer 4 is laminated onto the insulating film 2, and brought into contact electrically with the transparent conductive film 1 in the contact hole 3 section. The contact holes are shaped only at the positions of shaped parts as the drain and source electrode sections for the TFT in a drain wiring section 9 and a source wiring section. Since the contact holes are bored where required for electrical contacts and a semicon ductor film is shaped, the area of the transparent conductive film exposed to plasma at the formation of the semiconductor film is inhibited at the irreduc ible minimum of a demand, thus reducing the quantities of impurities (IN, Sn, etc.,) taken into the semiconductor film.</p> |
