发明名称 |
Semiconductor memory device having equalization terminated in direct response to a change in word line signal |
摘要 |
A semiconductor memory device includes an array of memory cells arranged in rows and columns; a plurality of word lines connected to the rows of the memory cells; a plurality of bit lines connected to the columns of the memory cells; word line selection means; bit line selection means; and equalizing means for equalizing the bit line to a desired voltage level in response to an address signal, and for terminating the equalization in response to change in a signal on a word line according to change in the address signal.
|
申请公布号 |
US5343432(A) |
申请公布日期 |
1994.08.30 |
申请号 |
US19910669725 |
申请日期 |
1991.03.14 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MATSUO, RYUICHI;KOSUGI, RYUICHI;TSUDA, NOBUHIRO;ISHIZAKI, OSAMU |
分类号 |
G11C11/41;G11C7/12;G11C8/18;(IPC1-7):G11C7/00;G11C8/00 |
主分类号 |
G11C11/41 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|