| 摘要 |
A method and means of bonding a semiconductor die (10) to a support substrate (35) using a thermosonic bonding apparatus (50). The semiconductor die (10) has bonding pads (14, 15, 17) on a first major surface (12), and the support substrate (35) has contact pads (46, 47, 44) on a principal surface (43). Hourglass shaped gold bumps (30) are formed on bonding pads (14, 15, 17). A second major surface (13) of semiconductor die (10) is secured to a thermosonic tool/end-effector (52), and the support substrate (35) is secured to a substrate chuck (48). The hourglass shaped gold bumps (30) are mated with the contact pads ( 46, 47, 44 ) on the support substrate (35). A bond is thermosonically formed between the gold bumps (30) and the contact pads (46, 47, 44).
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