| 摘要 |
Provided is a method for isolating circuit elements for effectively isolating devices on a semiconductor substrate from each other with use of a narrow insulating film. With such a method there is no likelihood of causing crystal defect in the semiconductor substrate or of deterioration in function of the channel stop of a channel stop region upon formation of the insulating film. The method for isolating circuit elements of the present invention includes steps of forming an insulating film over a semiconductor substrate, selectively removing the insulating film on a region to be an active region by etching to form a field insulator film, and implanting through the field insulator film ion of an impurity for preventing inversion of the conductivity type of the substrate into a region just under the field insulator film and adjacent to the surface of the substrate so as to form a channel stop region.
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