Process for obtaining multi-layer metallization of the back of a semiconductor substrate

摘要

The metallization of the back of the semiconductor substrate is obtained by depositing a series of metal layers, after ion implantation of dopant on the interface with the first layer. The step of ion implantation is followed by the deposition of one or more metal layers of the aforesaid series, and then by thermal annealing under vacuum or in an inert atmosphere, at a temperature considerably lower than 500 DEG C. and for a period considerably shorter than 60 minutes.