发明名称 |
Thin film, field effect transistor with a controlled energy band |
摘要 |
This transistor incorporates at least one first stack of semi-conductor conduction layers and at least one second stack of semiconductor layers with a single, highly doped thin film within the second stack giving it the character of a mobile electric charge donor, superimposed and supported by a substrate as well as at least two potential barriers located in the second stack on either side of the doped thin film in order to reduce the concentration of carriers in said second stack a metal gate resting on the second stack for modifying the concentration of carriers of the charges in the first stack, two ohmic contacts being placed on one of the stacks, on either side of the gate and serving as the source and drain.
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申请公布号 |
US5343057(A) |
申请公布日期 |
1994.08.30 |
申请号 |
US19920907826 |
申请日期 |
1992.07.02 |
申请人 |
FRANCE TELECOM ESTABLISSEMENT AUTONOME DE DROIT PUBLIC |
发明人 |
GERARD, JEAN-MICHEL;FAVRE, JACQUES |
分类号 |
H01L29/80;H01L21/338;H01L29/205;H01L29/225;H01L29/43;H01L29/778;H01L29/812;(IPC1-7):H01L29/38 |
主分类号 |
H01L29/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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