| 发明名称 |
Method of controlling surge protection device hold current |
| 摘要 |
The hold current of a breakover type surge protection device is increased by irradiating the device with gamma or x rays so as to form crystal lattice defects in the semiconductor regions thereof.
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| 申请公布号 |
US5343065(A) |
申请公布日期 |
1994.08.30 |
| 申请号 |
US19920961360 |
申请日期 |
1992.10.15 |
| 申请人 |
SANKOSHA CORPORATION |
发明人 |
SAITOU, TAKASHI |
| 分类号 |
H01L29/74;H01L27/02;H01L29/861;H01L29/866;H01L29/87;(IPC1-7):H01L29/92 |
主分类号 |
H01L29/74 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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