| 摘要 |
PURPOSE:To improve the yield rate of dryetching by a method wherein the necessary high frequency voltage is applied between opposing electrodes for the purpose of discharging electricity when the discharge is started, the impednace between electrodes is reduced to the impedance of the steady-state discharge or thereabout, then it is slowly increased to the steady-state discharge voltage, and after an etching has been finished, the discharge is stopped after slowing down. CONSTITUTION:An opposing electrode 11 and a table 12 are arranged in vertical direction in a reaction chamber 10, having a gas introducing hole 14 and a gas exhaust hole 16, leaving the prescribed interval. At this time, the penetrated part of the reaction chamber 10 of the supporting pole of the table 12 is insulated using an insulating material 16, and a number of material to be etched 30 such as SiO2, Si and the like are placed on the table 12. Then, a microcomputor 23 with which a steady-state discharge power and the slow up or slow down discharge power can be outputted is connected to the supporting pole through the intermediaries of a matching box 20, a high frequency power source 21 and an A/D converter 22. Through these procedures, gas is formed into a plasmic state by discharging a low voltage at first, thereby enabling to reduce the damage generating on the material to be etched. |
