发明名称 |
Compound semi-conductors and controlled doping thereof. |
摘要 |
A method of controlling the amount of impurity incorporation in a crystal grown by a chemical vapor deposition process. Conducted in a growth chamber, the method includes the controlling of the concentration of the crystal growing components in the growth chamber to affect the demand of particular growth sites within the growing crystal thereby controlling impurity incorporation into the growth sites. <IMAGE> |
申请公布号 |
EP0612104(A2) |
申请公布日期 |
1994.08.24 |
申请号 |
EP19940101079 |
申请日期 |
1994.01.25 |
申请人 |
OHIO AEROSPACE INSTITUTE |
发明人 |
LARKIN,DAVID J.;NEUDECK,PHILIP G.;POWELL,J.ANTHONY;MATUS,LAWRENCE G. |
分类号 |
C30B25/02;C30B25/18;H01L21/205;H01L21/365 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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