| 摘要 |
PURPOSE:To obtain a self-alignment type thin film transistor having good characteristics and high yield by melting a conductive film of a portion contacted with indium tin oxide together with indium tin oxide to remove it, thereby accurately finely working stably it. CONSTITUTION:After a titanium is deposited as a gate electrode 2 on an insulating substrate 1, a silicon nitride film as a gate insulating film 3 and an amorphous silicon film as a semiconductor film 4 are continuously formed in the same vacuum system, and an indium tin oxide (ITO) 5 is formed by a sputtering method. Thereafter, the ITO 5 is exposed from the back side of the substrate 1 with the electrode 2 as a pattern, the ITO 5 is etched in the same shape as the electrode 2 to expose the film 4, the resist film is then removed, a molybdenum 6 is formed at 250 deg. of substrate temperature on the entire surface, the ITO is etched, and only the molybdenum is simultaneously removed on the ITO to form a drain electrode 7 and a source electrode 8. Thus, since the drain and source electrodes are not separated, a self-alignment type thin film transistor can be manufactured in high yield. |
