| 摘要 |
PURPOSE:To improve adhesion properties of an amorphous silicon thin film with an electrically insulated substrate by causing a part in contact with the substrate in the amorphous silicon thin film to grow with a power density higher than a predetermined value by a plasma CVD method. CONSTITUTION:Using a plasma CVD apparatus, a plasma is generated with a high frequency power applied across both electrodes while a mixed gas including monosilane using hydrogen as the base gas is supplied to the reactor. A metal mask having a slit, for example, of 1mm is stacked on the upper surface of cleaned glass substrate 1 and is placed on the lower electrode of apparatus. Next, an adhesion film 2a is caused to grow up to a thickness of 0.1mum in about 5 minutes with a plasma power of 200W and then a high resistance film is caused to grow up to a thickness of 0.5mum in about 60 minutes with a plasma power lowered to 50W. A low resistance film 2b is also caused to grow up to a thickness of 0.1mum or less in about 10 minutes with the power of 50W by mixing a doping agent to the reaction gas. As described above, an amorphous silicon thin film 2 grown using a metal mask is formed in a shape that has a inclined surface on both sides thereof. |
