发明名称 |
DENKITEKINIPUROGURAMUKANONAYOMIDASHISENYOMEMORI*SERU |
摘要 |
A programmable read-only memory cell includes a semiconductor substrate (20) having an n-type epitaxial layer (22) embodying a collector region for an NPN transistor which also includes a base region (28), a p-type base contact region (21) and an n-type emitter region (32). Located on the emitter region (32) is an anti-fuse structure incorporating a region of undoped polycrystalline silicon (37) and an n-type doped polysilicon region (34). Metal contacts (50, 51) are provided for the anti-fuse structure and the base contact region (21). Programming is effected by applying a relatively low current through the undoped polycrystalline silicon region (37) which switches from a high to a low resistance condition. The cell enables production of a high density PROM and is fabricated on a chip together with CMOS devices by steps compatible with CMOS processing technology. |
申请公布号 |
JPH0666433(B2) |
申请公布日期 |
1994.08.24 |
申请号 |
JP19850500726 |
申请日期 |
1985.02.04 |
申请人 |
NCR INT INC |
发明人 |
ERUZUWAASU DANIERU ROIDO;SARIUAN HOORU ANDORYUU |
分类号 |
H01L29/73;G11C17/00;H01L21/331;H01L21/8229;H01L23/525;H01L27/10;H01L27/102;H01L29/68;H01L29/72;H01L29/732;(IPC1-7):H01L27/102 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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