| 摘要 |
PURPOSE:To enable to easily evaluate the cleanness of a semiconductor thin film forming device with high sensitivity and efficiency using a low-priced means by a method wherein the thin film formed on the material to be processed is evaluated by measuring the quantity of impurities located in the decomposition liquid obtained by decomposing the thin film using the steam of hydrofluoric acid. CONSTITUTION:A cover member 9 is opene, the wafer 4 whereon thin films 10a-10e are formed is supported by a wafer carrier 5, and after a carrier cover 11 has been provided on the wafer carrier 5, the cover member 9 is closed and an airtightly closed state is obtained. Then, when an airtight container 1 is maintained at the temperature range of 20-35 deg.C and it is left intact for the prescribed period, the hydrofluoric acid steam evaporated from a beaker 3 passes through the gap 5a of the wafer carrier 5 and adhered to the surface of the thin films 10a-10e, and decomposes the thin films 10a- 10e. Said decomposition liquid 7 travels on the surface of the wafer 4 and drops to a decomposition liquid receiving plate 8. Then, the decomposition liquid 7 is collected by a micropipette, for example, from the decomposition liquid receiving plate 8, injected in the analyzing cell of a frame atom spectrophotometry device, and the quantitative and qualitative determination of the impurities in the decomposition liquid is performed. |
