BUNRIGATAHANDOTAIKOSEITAINOSEIZOHOHO

摘要

An integrated circuit structure comprises a plurality of islands of semiconductor material (16-1 through 16-5) each island being separated from adjacent islands by a groove formed in annular shape around said island to laterally define the dimensions of each such island, an oxide (12, 14 and 15) formed over the surface of said grooves (13-1 through 13-6) and selected glass (15) deposited on said oxide (14) in the grooves and over the top surface of said device, said glass having the property that it melts and flows at a temperature beneath the temperature at which dopants in the islands of semiconductor material substantially redistribute, said selected glass (15) having a substantially flat top surface thereby to give said structure a substantially flat top surface.