| 摘要 |
<p>PURPOSE:To provide a monocrystal emitter with good reproducibility and uniformity by forming at least the top electron emitting part by evaporation so as to form a monocrystal consisting of a metal or semiconductor or a polycrystal preferentially oriented vertically to a base. CONSTITUTION:An insulating layer 2 is formed on a Si base 1 by thermal oxidation, CVD method, or sputtering evaporation of SiO2Si, and a gate layer 3 of Nb film is formed on the layer 2. Thereafter, a gate hole is patterned by a resist 4, and a gate 3 is etched by active ion etching. Further, the layer 2 is etched by buffer hydrofluoric acid to form a gate hole 5, and an Al release layer 6 is formed by oblique evaporation so that the hole is never evaporated. An emitter material such as Au or Mo is ICB- or MBE-evaporated from the vertical direction to the base 1 to form a conical emitter 7, and Al is finally peeled.</p> |
