| 摘要 |
PURPOSE: To easily manufacture a MOS control diode which can be used under a high electrical power. CONSTITUTION: A MOS control diode 1, consisting of p<+> -layer 5, an n<-> -layer 4 and an n<+> -layer 9 is disclosed. The p-region 8 completely surrounding the n<+> -layer 9 is provided between the n<-> -layer 4 and the n<+> -layer 9. The p-region 8 can be terminated by applying a voltage to the gate electrode provided thereon. As a result, the diode is changed into a conductive state from the normal non-conductive state. The diode can be provided with a higher rejecting capability by means of an edge termination on a cathode side. The edge termination in the anode side brings about inverse rejection diode, and the short circuit on the anode side brings about an inverse conductive diode.
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