发明名称 |
Method for forming a bipolar transistor using doped SOG |
摘要 |
A method for forming a bipolar transistor which employs a single drive-in step to form an emitter and a base. A layer of SOG containing a plurality of dopants is spun onto a collector, typically silicon. The dopants are driven into the collector to form the base and emitter. The method employs diffusion instead of implanting to form shallow and abrupt junctions without damage to the crystal lattice of the silicon.
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申请公布号 |
US5340752(A) |
申请公布日期 |
1994.08.23 |
申请号 |
US19920965823 |
申请日期 |
1992.10.23 |
申请人 |
NCR CORPORATION |
发明人 |
ALLMAN, DERRYL D. J.;KWONG, DIM-LEE |
分类号 |
H01L21/225;H01L21/316;H01L21/331;H01L29/73;H01L29/732;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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