| 摘要 |
PURPOSE: To obtain a transistor which can behave as a single analog transistor, while the transistor has the advantage of a digital transistor by connecting the sources and drains of several digital transistors to each other and substantially coupling several channels into a single large channel such that it can be used as an analog transistor. CONSTITUTION: Individual field effect transistors(FETs) are symmetrically arranged with respect to centroids, which are symmetrically distributed throughout an IC. Both FETs 1A and 1B are p-channel devices (similar to FETs 2A and 2B). Holes are majority carriers and flow to the drains from the sources. Consequently, the transistors 1A and 1B are actually connected in parallel. The source of the transistors 1A and 1B are integrally connected similarly to their drains. This is similar for the FETs 2A and 2B. These devices can be cascade-connected to each other.
|
