| 摘要 |
METHOD OF FORMING COATINGS CONTAINING AMORPHOUS SILICON CARBIDE The invention is a method of forming a continuous coating of amorphous silicon carbide on the surface of articles by plasma enhanced chemical vapor deposition. In the method, the chemical vapor comprises a silicon-containing cyclobutane, such as a silacyclobutane or a 1,3-disilacyclo-butane. The coatings formed by the invention are useful for application to solar cells, for preventing corrosion of electronic devices, for forming interlevel dielectric layers between metallization layers of electronic devices and for providing abrasion resistance to surfaces.
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