发明名称 EXPOSING METHOD, PHASE SHIFT MASK TO BE USED THEREIN AND PRODUCTION OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE SAME
摘要 <p>PURPOSE:To easily form the pattern data of the phase shift mask capable of improving the depth of focus of a transfer exposing surface and the resolution of the patterns. CONSTITUTION:The following stages are provided: A first enlarging stage (107a, 107b) for forming the data on main light transmission patterns by enlarging the width of a repeating pattern in accordance with process conditions without changing the relative position coordinates of the repeating pattern at the time of forming the pattern data on the phase shift mask. A second enlarging stage (108a, 108b) for forming the data on auxiliary light transmission patterns by removing the data on the main light transmission pattern from the data of the patterns obtd. by the enlargement after enlarging the width of the main light transmission patterns of the data state obtd. by the first enlarging stage (107a, 107b) by the prescribed quantity in accordance with the characteristic conditions of a reduction stepper optical system.</p>
申请公布号 JPH06236021(A) 申请公布日期 1994.08.23
申请号 JP19930211180 申请日期 1993.08.26
申请人 HITACHI LTD 发明人 OKAMOTO YOSHIHIKO
分类号 G03F1/29;G03F1/32;G03F1/68;G03F1/80;G03F7/20;H01L21/027;(IPC1-7):G03F1/08 主分类号 G03F1/29
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