| 摘要 |
PURPOSE: To disclose a non-volatile memory cell and its manufacturing method capable of high-speed programming by the action of source side hot electron injection at a low control gate voltage. CONSTITUTION: A source side implanted non-volatile memory cell, comprising a control gate stack 12 and a floating gate arranged on the outer surface of a channel region 26 formed on a substrate 10, is provided. A drain region 32 and a source region 30 are formed on the opposite side of the stack structure 12. Source side implantation of hot electrons occurs between the source region 30 and the floating gate 18, when a comparatively low voltage is applied onto a control gate conductor 22.
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