| 发明名称 |
Process and apparatus for etching semiconductor wafers |
| 摘要 |
Process for etching a semiconductor wafer which includes the steps of rotating the wafer, and contacting the rotating wafer with a flowing froth, the froth being formed, at least in part, by the effervescence of a pressurized etchant containing a dissolved gas.
|
| 申请公布号 |
US5340437(A) |
申请公布日期 |
1994.08.23 |
| 申请号 |
US19930133980 |
申请日期 |
1993.10.08 |
| 申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
ERK, HENRY F.;VANDAMME, ROLAND R. |
| 分类号 |
A61K31/415;B44C1/22;C07D233/06;H01L21/00;H01L21/306;(IPC1-7):H01L21/306 |
主分类号 |
A61K31/415 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
